| PART |
Description |
Maker |
| BF599 Q62702-F979 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor
TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| UMG3N FMG3A EMG3 |
Emitter common (dual digital transistors)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| TD62503FGOEL TD62503PG |
Single-transistor array (common-emitter)
|
Toshiba Corporation
|
| FF400R12KT3E |
62mm C-series module with common emitter
|
Infineon Technologies AG
|
| EMS1 |
Emitter Common Dual Digital Transistors
|
Rohm
|
| TD6259307 TD62598AFNG TD62594AFNG TD62593AFNG TD62 |
8CH SINGLE DRIVER : COMMON EMITTER
|
Toshiba Semiconductor
|
| 1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|
